Selective Publications
 
Patents:
  1. Semiconductor Nano Layer Structure and Manufacture Method Thereof (半導體奈米層狀結構及其製作方法), 2015 USA patent No. US 9,142,410 B2, 中華民國專利申請案號102126930
  2. Vertically oriented nanowires array structure and method thereof (筆直直立奈米線陣列結構及其製造方法), 2014 USA patent No. US 8,617,967 B2, 中華民國專利證書1466816
Book Chapters:
  1. 太陽電池 (Solar Cells), 五南叢書出版公司
  2. Z. Pei, H. L. Hsiao, and H. L. Hwang,“Optical and Electrical Transport Properties of Silicon Nano Dots Embedded in Siliocn-rich Nitrides”, Handbook of Semiconductor Nanostructures and Devices, 2004 American Scientific Publishers.
  3. Z. Pei, H. L. Hsiao, and H. L. Hwang, Advanced Luminescent Materials and Quantum Confinement, 1999
  4. Z. Pei, H. L. Hsiao, and H. L. Hwang, Materials Research Society Vol. 560, Luminescent Materials 1999.
  5. H. L. Hsiao, A.B. Yang and H.L. Hwang, Materials Research Society Vol. 507, Amorphous and Microcrystalline Silicon Technology 1998
  6. H. L. Hsiao, K.C. Wang, A.B. Yang, T.R. Yew and H.L. Hwang, Materials Research Society Vol. 406, Diagnostic Techniques for Semiconductor Materials Processing II 1996
Journal Papers
  1. S. M. Lu*, W. B. Su, C. L. Lin, W. Y. Chan, H. L. Hsiao, C. S. Chang, and Tien T. Tsong, “Disappearance of Lowest-Order Transmission Resonance in Ag Film of Critical Thickness” , Japanese Journal of Applied Physics, 50 (2011), 08LB01.
  2. S. M. Lu*, W. B. Su, C. L. Lin, W. Y. Chan, H. L. Hsiao, C. S. Chang, and Tien T. Tsong,
    “Electron relaxation in empty quantum-well states of a Pb island on Cu(111) studied by Z-V (distance-voltage) spectroscopy in scanning tunneling microscopy”, Journal of Applied Physics, 108 (2010)83707.
  3. Hsi-Lien Hsiao*, Zhan-Yuan Liu, Pin-Hui Lee, “Acetylene assisted formation of GaN–carbon nanotubes heterojunction nanowires”, Diamond and related Materials 18, (2009) 537.
  4. H.L. Hsiao*, A.B. Yang and H. L. Hwang, “Luminescence and Structural Properties of Silicon-rich Nitride by X-ray Absorption Spectroscopy”, Journal of Physics and Chemistry of Solid, 69 (2008) 278-283.
  5. L.C. Lu, Y.L. Chueh, L. J. Chen*, L.J. Chou, H.L. Hsiao, and A.B. Yang, "Synthesis and formation mechanism of gallium nitride nanotubular structure" Electrochemical and Solid State Letters 8, (2007) G153-G155.
  6. H.L. Hsiao*, C.Y. Chen and A.B. Yang, ”Low Temperature Selective Growth and Field Emission Characteristics of Tapered SiGe Nanowires Array”, WSEAS Transactions on Electronics 4 (2006) 179.
  7. M.C. Lu, Y.L. Chueh, L. J. Chen*, L.J. Chou, H.L. Hsiao, and A.B. Yang, 2005 "Synthesis and formation mechanism of gallium nitride nanotubular structure" Electrochemical and Solid State Letters 8, G153-G155.
  8. Z. Pei*, A.Y.K. Su, H.L. Hwang, and H.L. Hsiao, 2005 “Room temperature tunneling transport through Si nanodots in silicon rich silicon nitride”, Applied Physics Letters 86, 63503.
  9. H.F. Hsu, H.C. Hsu, T.F. Chiang, L.J. Chen, and H.L. Hsiao*, 2004, "Identification of the first nucleated phase in submonolayer Ti deposited on Si(111)-7x7 by atomic resolution techniques”, Ultramicroscopy 100/3-4, 347-351.
  10. H.F Hsu, L.J. Chen*, H.L. Hsiao, T.W. Pi, 2003: Adsorption and switching behavior of individual Ti atoms on the Si(111)-7x7 surface, Phys. Rev. B 68.
  11. H.L. Hsiao*, A.B. Yang and H. L. Hwang, 2003: Direct Observation of Localized Unoccupied States by Synchrotron Radiation Two-Color Resonant Photoemission”, Applied Surface Science, Volume: 212-213, May 15, pp. 73-77.
  12. H.F Hsu, M.C Lu, C.K. Fang, L.J. Chen*, H.L. Hsiao, T.W. Pi, 2003: Initial stages of ultra thin Ti film growth on Si(111)-7×7 surface, Thin Solid Film Volume: 428, Issue: 1-2, March 20, 2003, pp. 133-138.


Conference Papers:
  1. H.L. Hsiao, L.F. Chou, E. Y. Chang, Y.S. Lee, W.D. Chang, P.Y. Wang, C.Y. Tsao (2013, Nov). Tapered Silicon Nanorod Solar Cell on Aluminum Foil. 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), Taipei.

 

 

 

 
 
 
 
 
 
 
 

 
Tel : +886-4-23590121 ext. 32141, 32150
Fax: +886-4-23594643
Contact H-L Hsiao

Laboratoty of Advanced Materials for Photonics and Electronics (LAMPS),
P.O. Box 5-803,
Department of Applied Physics,
Tunghai University,
407 Taichung, TAIWAN